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Invention Disclosure Title :   Surface Transfer Hole Doping of Epitaxial Graphene using High Work Function Metal Oxide Thin Film (10133N)
Other inventors :  Jiatao SUN,Thye Shen, Andrew WEE,Wei CHEN,Zhenyu CHEN
Patent Title Country File No Date Filed Patent Status Patent Number Date Granted
1 Hole Doping Methods for Graphene United States 61/343,886 05/05/2010 Converted
2 Hole Doping of Graphene PCT PCT/SG2011/000177 05/05/2011 Entered into National Phase
3 Hole Doping of Graphene Singapore 201207704-6 16/10/2012 Abandoned
4 Hole Doping of Graphene China 201180022146.0 01/11/2012 Granted ZL 201180022146.0
5 Hole Doping of Graphene Japan 2013-509032 01/11/2012 Granted 5814348 02/10/2015
6 Hole Doping of Graphene Brazil BR 11 2012 028292-1 05/11/2012 Abandoned
7 Hole Doping of Graphene United States 13/696,189 05/11/2012 Granted 9,269,773 23/02/2016
8 Hole Doping of Graphene Russia 2012149561 22/11/2012 Lapsed 2565336 16/09/2015
9 Hole Doping Methods for Graphene European 11777667.4 03/12/2012 Abandoned
10 Hole Doping of Graphene South Korea 10-2012-7031860 05/12/2012 Abandoned
11 Hole Doping of Graphene Hong Kong 13111216.0 02/10/2013 Abandoned
12 Hole Doping of Graphene Singapore 10201503073Q 20/04/2015 Pending

 

Invention Disclosure Title :  Fabrication of Room-Temperature Ferromagnetic Graphene by Surface Modification with High Work Function Metal Oxides (10205N)
Other inventors :  Jiatao SUN,Thye Shen, Andrew WEE,Wei CHEN
Patent Title Country File No Date Filed Patent Status Patent Number Date Granted
1 Fabrication of Room-Temperature Ferromagnetic Graphene by Surface Modification with High Work Function Metal Oxides United States 61/404,975 12/10/2010 Converted

 

Invention Disclosure Title :  Synthesis of Graphene by Thickness Selective Laser Ablation of Multilayered Graphite (10335N)
Other inventors :  Arkajit ROY BARMAN,Barbaros ÖZYILMAZ,Sankar DHAR,Thirumalai Venky VENKATESAN
Patent Title Country File No Date Filed Patent Status Patent Number Date Granted
1 Synthesis of Graphene by Thickness Selective Laser Ablation of Multilayered Graphite United States 61/421,265 09/12/2010 Abandoned

 

Invention Disclosure Title :  Room-temperature Ferromagnetic Transparent Semiconductor Thin Film (09144N)
Other inventors :  Andrivo RUSYDI,Arkajit ROY BARMAN,Hyunsoo YANG,Sankar DHAR,Thirumalai Venky VENKATESAN
Patent Title Country File No Date Filed Patent Status Patent Number Date Granted
1 Room-Temperature Ferromagnetic Transparent Semiconductor Thin Film United States 61/229,311 29/07/2009 Abandoned