Principal Investigator

ARIANDO
Deputy Head of Research & Graduate Studies
Associate Professor, Department of Physics
Dean’s Chair Professor, Faculty of Science
Deputy Director, NUSNNI-Nanocore

#S12-02-09, Department of Physics, National University of Singapore
2 Science Drive 3, Singapore 117542

#T-Lab, 5th Floor, NUSSNI-NanoCore, National University of Singapore
5A Engineering Drive 1, Singapore 117411

Phone: +65 65167900
Fax: +65 67776126
Email: ariando@nus.edu.sg

Ariando is currently the Deputy Head of Research and Graduate Studies of the Department of Physics. He received his Bachelor degree in Physics with Honour (Cum Laude, Top 1) in 1998 from ITB Indonesia and Masters degree in 2001 and PhD degree in 2005 both in Physics from the University of Twente, under the direction of Professor Hans Hilgenkamp and Professor Horst Rogalla. In strong collaboration with IBM TJ Watson Research Center, his doctoral thesis included the study of pairing symmetry in high-Tc cuprates and imaging quantum vortices in s-wave/d-wave Josephson junctions. He then became a NanoNed post-doctoral fellow from 2005-2007 and joined National University of Singapore as a Faculty member in 2008. He is currently an Associate Professor with tenure in the Department of Physics, Dean’s Chair Professor of Faculty of Science and Deputy Director of NUSNNI Nanocore. He is a NEXT Fellow at CNRS France.

Journals     Presentations     Awards     Patents     National     Media Coverage

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Honours, Awards and Fellowships

  • Dean’s Chair Professor, since 2017
  • NEXT Invited Scientist, CNRS-LNCMI, France, since 2016
  • Finalist, MRS Young Scientist Awards, IUMRS-ICYRAM, China 2014
  • Young Scientist Award, Faculty Award, National University of Singapore 2013
  • Nominee, New York Academy of Science, USA 2013
  • Omicron Nanotechnology Award, Singapore 2010
  • NanoNed Postdoctoral Fellow, The Netherlands 2005
  • Best Poster Award, European Science Foundation, Pi-Shift-Vortex meeting, Germany 2004
  • FOM Research Studentship, The Netherlands 2002
  • International Master Scholarship, University of Twente, The Netherlands 1999
  • Best Graduate (Cum Laude), Institut Teknologi Bandung, Indonesia 1998

Editorial Boards

  • Invited Editor, PNAS, Proceedings of the National Academy of Sciences of the United States of America
  • Editorial Advisory Board, Advanced Material Interfaces, WILEY-VCH Verlag GmbH & Co
  • Editorial Board, Scientific Reports, Nature Publishing Group
  • Editorial Board, Springer Series on Nano-Optics and Nanophotonics, Springer
  • International Advisory Board, International Workshop on Oxide Electronics (WOE)

 Membership & Chair of Conference Committees

  • International Conference on Materials for Advanced Technologies (ICMAT), Singapore 2023
  • APS March Meeting, USA 2021
  • Spring 2020 MRS Meeting, Phoenix, Arizona, USA 2020
  • 32st International Microprocesses and Nanotechnology Conference, Japan 2021
  • 32st International Microprocesses and Nanotechnology Conference, Sapporo, Japan, November 2019
  • 31st International Microprocesses and Nanotechnology Conference, Hiroshima, Japan, November 2018
  • Symposium T1S9: High Temperature Superconductors: Materials, Technologies, and Systems, 1th International Conference on Ceramic Materials and Components for Energy and Eviromental Applications (CMCEE), Singapore, July 2018
  • Spring 2016 Material Research Society (MRS) Meeting, Phoenix, Arizona, USA 2016
  • International Conference on Advanced Materials 2015 (ICMAT 2015), Singapore 2015
  • Conference Chair of 20th Workshop on Oxide Electronics (WOE 20), Singapore 2013
  • International Conference on Advanced Materials 2013 (ICMAT 2013), Singapore 2013
  • NUSNNI-Nanocore Workshop, National University of Singapore, Singapore 2012
  • International Conference for Young Researchers on Advanced Materials (ICYRAM), Singapore 2012
  • International Conference on Materials for Advanced Technologies (ICMAT), Singapore 2011
  • International Conference on Materials for Advanced Technologies (ICMAT), Singapore 2009

 Service as a reviewer (journals, conferences, books, grant agencies)

  • Reviewer for international journals: Science, Nature Materials, Nature Nanotechnology, Nature Energy, Nature Communications, Nano Letters, Physical Review Letters, Physical Review X, Physical Review B, ACS Nano, AIP Advances, J. of Applied Physics, APL Materials, Physica Status Solidi, Int. J. of Modern Physics B, Int. J. of Nanoscience, Applied Physics Letters, IEEE Trans. Appl. Supercond., J. Phys. Chem. Sol., ChemmCom, Chem. Matters., ACS Appl. Maters. & Interfaces, Frontiers Physics, Nanoscale, Nature Asia, Scientific Reports, Advanced Materials, Advanced Materials Interfaces, Nanoscale Research Letters, Materials Chemistry and Physics, EPJAP, Supercond. Sci. Technol., Advanced Electronic Materials
  • Reviewer for grant agencies: Department of Energy (DOE), USA, The Israel Science Foundation (ISF), The Israeli Ministry of Science, The Netherlands Organization for Scientific Research (NWO, the Dutch Research Council), National Science Center Poland, Khalifa University of Science & Technology (Abu Dhabi, UAE), The Royal Society of UK & Science Foundation Ireland

Memberships of institutional, national or international scientific advisory boards

  • International Scientific Advisory Boards, Workshop on Oxide Electronics (WOE)
  • Member of Singapore Materials Research Society (MRS-S)
  • Member of European Materials Research Society (IUMRS)
  • Member of Singapore Institute of Physics (IPS)
  • Member of American Physical Society (APS)

List of patents

  • Dysprosium Scandate Films, Methods of Fabrication and Uses Thereof, Patent No. PCT/10202104861P
  • Magnetoresistance sensor and method of fabrication thereoff, 10202002964X
  • Hole Doping of Graphene, US Patent No. 9,269,773
  • Hole Doping of Graphene, Japan Patent No. 5814348
  • Hole Doping of Graphene, China Patent No. ZL 201180022146.0
  • Hole Doping of Graphene, Rusia Patent No. 2565336
  • Hole Doping of Graphene, Hong Kong Patent Application No. 13111216.0, ILO Ref:  10133N-PCT/CN/HK
  • Hole Doping of Graphene, Brazil Patent Application No. BR 11 2012 028292-1, ILO Ref:  10133N-PCT/BR
  • Hole Doping of Graphene, Singapore Patent Application, ILO Ref: 10133N-PCT/SG
  • Surface Transfer Hole Doping of Epitaxial Graphene using High Work Function Metal Oxide Thin Film. PCT/SG2011/000177 (05 May 2011).
  • Synthesis of Graphene by Thickness Selective Laser Ablation of Multilayered Graphite. US Provisional Patent No. 61/421,265 (09 December 2010).
  • Fabrication of Room-Temperature Ferromagnetic Graphene by Surface Modification with High Work Function Metal Oxides. US Provisional Patent No. 61/404,975 (12 October 2010).
  • Synthesis of Specific Number of Graphene Layers by Thickness Selective Laser Ablation. US Provisional Patent No. 61/286,092 (14 December 2009).
  • Room Temperature Ferromagnetic Transparent Semiconductor Thin Film. US Provisional Patent No. 61/229,311 (29 July 2009).

 Research Grants

No Award Period Funding Source Total (S$)
1 2022 – 2025 (PI) MOE Tier 2

1,051,436.00

2 2021 – 2024 (PI) NRF NRF – ISF Joint Call

420,200.00

3 2021 – 2024 (PI) MOE Tier 2

637,800.00

4 2020 – 2023 (PI) A*STAR AME-IRG

711,000.00

5 2019 – 2022 (PI) A*STAR AME-IRG

654,000.00

6 2016 – 2021 (PI) NRF CRP

8,967,436.00

7 2018 – 2021 (PI) MOE AcRF Tier 1 Collaboration

42,332.00

8 2017 – 2021 (PI) MOE AcRF Tier 1 RSB

60,000.00

9 2019 – 2020 (PI) MOE AcRF Tier 1 RSB

48,974.00

10 2017 – 2019 (PI) MOE AcRF Tier 1

40,000.00

11 2019 – 2020 (PI) NRF CARES – NUS

245,000.00

12 2019 – 2020 (PI) MOE TAP – ILO

135,000.00

13 2016 – 2019 (PI) MOE AcRF Tier 1

179,000.00

14 2015 – 2018 (PI) MOE AcRF  Tier 1

167,000.00

15 2013 – 2018 (Co-PI) NRF CRP

6,041,698.00

16 2012 – 2017 (Co-PI) NRF CRP

4,935,450.00

17 2010 – 2013 (PI) MOE AcRF

172,000.00

18 2009 – 2014 (Team PI) NRF-CRP

7,148,700.00

19 2009 – 2012 (Co-PI) MOE AcRF  Tier 1

90,000.00

20 2009 – 2012 (Co-PI)   MOE FRC

50,000.00

21 2008 – 2012 (PI)   NUS Strategic Fund

250,000.00

22 2008 (PI)   NUS Strategic Fund (equipment)

850,000.00